V40100K vishay general semiconductor document number: 89121 revision: 25-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product dual high-voltage trench mos barrier schottky rectifier typical applications for use in high frequency converters, high efficiency smps, output rectification, freewheeling, reverse battery protection, dc-to-dc system and increased power density systems. features ? 150 c high performance schottky diode ? very low forward voltage drop ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? negligible switching losses ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: to-220ab molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test marking: V40100K polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 20 a v rrm 100 v i fsm 250 a ty p i c a l v f at i f = 20 a at t j = 125 c 0.63 v t j max. 150 c to-220ab 1 2 3 pin 1 pin 2 case pin 3 tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol V40100K unit maximum repetitive peak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device per diode i f(av) 40 20 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 250 a non-repetitive avalanche energy at t j = 25 c, i as = 1.5 a, l = 60 mh per diode e as 67.5 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
new product V40100K vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89121 revision: 25-jun-09 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage (2) i r = 1.0 ma t a = 25 c v br 100 (minimum) - v i r = 10 ma 105 (minimum) - instantaneous forward voltage per diode (1) i f = 5 a i f = 10 a i f = 20 a t a = 25 c v f 0.51 0.59 0.72 - - 0.82 v i f = 5 a i f = 10 a i f = 20 a t a = 125 c 0.44 0.53 0.63 - - 0.67 reverse current at rated v r per diode (2) v r = 70 v t a = 25 c t a = 125 c i r 9 10 - - a ma v r = 100 v t a = 25 c t a = 125 c - 21 1000 45 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol V40100K unit maximum junction to case per diode per device r jc 4 2 c/w typical thermal resistance case to heatsink r cs 0.5 ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab V40100K-e3/4w 1.85 4w 50/tube tube figure 1. forward current derating curve case temperat u re (c) a v erage for w ard c u rrent (a) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 figure 2. forward power loss characteristics per diode 0 2 4 6 8 10 12 14 16 1 8 0 5 10 15 20 25 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = t p /t t p t
new product V40100K vishay general semiconductor document number: 89121 revision: 25-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode instantaneo u s for w ard v oltage ( v ) 0 0.2 0.4 0.6 0. 8 1 100 10 1 0.1 t a = 25 c t a = 125 c t a = 150 c t a = 100 c instantaneo u s for w ard c u rrent (a) 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 110 100 0.1 re v erse v oltage ( v ) j u nction capacitance (pf) 10 000 1000 100 10 1 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55)
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